TSMC (Taiwan Semiconductor Manufacturing Co.) believes that their 10nm fabrication process will not likely only be readily available around the exact same time whenever Intel Corp. begins to utilize its 10nm technology, and definitely will also provide equivalent overall performance and density as Intel’s.
In a bid to accelerate time-to-market of their manufacturing processes featuring FinFET transistors, primary deal makers of semiconductors required to blend multi-gate transistors with back-end-of-line ( BEOL ) interconnect streams of their 20nm manufacturing tech. Consequently, while TSMC, GlobalFoundries as well as Samsung Electronics formally provide their clients 14nm and also 16nm FinFET processes, which could improve numerous microchips or perhaps trim down their TDP, they solely deliver microchip geometries similar to those of products crafted from 20nm technologies. By contrast, Intel has “true” 14nm fabrication technology which enables them to take advantage of more compact CPU sizes and lesser expenses. With 10nm TSMC will certainly proceed to 10nm BEOL interconnects therefore will deliver its clients a good opportunity to make their chips compacter.


Related:Samsung announced the first 10nm FinFET technology, Feel it TSMC


“The performance of our 10nm, in terms of speed, power and density will be equal to what we believe Intel will define as its 10nm technology,” said Elizabeth Sun, TSMC Director of Corporate Communications, in an interview with EE Times. “Technology-wise, we think we can close the gap at 10nm.”


Wanna give a glance? : NVIDIA: TSMC is our important partner, they have confidence in 16nm process

As per TSMC’s estimations , their 10nm FinFET will provide over 25 % clock-rate enhancement over the 16nm FinFET+ at the identical power consumption , it really is expected to be 45 % more energy economical as well as believed to present 2 .2 x higher density over 16nm FinFET+, which imparts a tremendous improvement. Risk production of 10nm FinFET microchips is planned to commence in the 4th quarter of 2015, while high-volume production will start in 2017.
As reported, TSMC will utilize both immersion along with extreme ultraviolet ( EUV ) lithography gear for 10nm manufacturing . The company however needs to present precise info how it plans to use EUV. The utilization of EUV for process technology beyond 10nm nevertheless is dependent upon whether it will be ready for manufacturing.


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“We are working with ASML with the objective at some future point if extreme ultraviolet (EUV) becomes manufacturing ready, we can insert EUV partially to 10nm,” said Ms. Sun. “Partial insertion means only in a few critical layers. It is still a work in progress.”


TSMC continues to be assertively boosting investment on research, development and manufacturing capacity in the the past few years. This absolutely will assist the firm to deliver manufacturing technologies akin to those employed by Intel to manufacture its microprocessors.


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