Today Smamsung Electronic announced that they are going to begin the mass production of the world’s most advanced DDR3 memory, using the 20nm process.
In memory, flash memory technology, semiconductor manufacturers are generally not released exact figures very often just say 20nm level of class and a different logo 2x, 2y, 2z and other representatives of the advanced level. The Samsung explicitly described as ” 20 nanometer Process Technology “, which is true 20nm.
Samsung’s mass production of the world’s most advanced DDR3 memory: 20nm
In Samsung DRAM memory chips, each cell is equipped a capacitor, the transistor is used to connect the other Units. Not like the NAND flash units which contains only one unit transistor. The new process seems more difficult but powerful. At this end, Samsung re-adjust the design and manufacturing technology, and use an improved double exposure, atomic layer deposition (ALD), combined with the existing ArF immersion lithography and other advanced technologies.
Samsung said that this breakthrough for the future to 1xnm forward and laid a solid foundation, and may be this will also use in the better manufacturing of DDR4.
Samsung’s 20nm DDR3 memory particles capacity of 4Gb (512MB), production efficiency more than 30% higher than 25nm DDR3, 3xnm DDR3 is twice as much, in terms of power consumption it’s equivalent capacity 25nm DDR3 save up to 25%.
Additionally, the Total Global Value of DRAM memory market in 2013 is about $35.6 Billion, in 2014 the expected increment is more than 37.9 Billion.