Samsung Electronics Co. announced the mass production of memory chips for the first DDR4 DRAM manufactured under a 10 nanometers (10 nm), reaching a milestone after being the first company to launch DDR3 DRAM memory chips manufactured under 20 nanometers in 2014. These DDR4 10nm memory chips of 8Gb improve the productivity of the wafer by more than 30 percent over current DDR4 memory chips @ 20nm. These DDR4 memory modules (DIMM and SO-DIMM) will be available with capacities from 4 to 128 GB. Corresponding 10-nm chips for mobile devices will follow at a later date.

Samsung starts mass production of DDR4 DRAM to 10nm


“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”

These new DRAM chips will run at a transfer speed of about 3200 megabits per second (Mbps), making it 30 percent faster than the rate of 20nm DDR4 DRAM ranging to 2400 Mbps. Thanks to the new lithography, which not only improve performance, but energy consumption, which is why compared to 20nm process manufacturing these chips consume between 10 and 20 percent less energy.

These DDR4 memory modules will arrive throughout the current year with capacities ranging from 4 to 128 GB.

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