Samsung from last year in the mass production of 14nm FinFET technology and also gets Apple, Qualcomm and other major orders. On the other side of note mass production of the TSMC’s 16nm FinFET process faced delays. Not surprisingly, then under the early release of Galaxy S6 smartphone, you will see the Exynos 7420 processor featuring 14nm process node. Samsung’s 14nm process is already in the lead, but it seems like for company this achievement was not enough and they announced that 10nm FinFET process is also not too far from us.
Samsung announced the first 10nm FinFET technology
In this week’s ISSCC conference, president of Samsung’s semiconductor Kim Ki-nam shows report that Samsung’s 10nm process is being development phase, which is the world’s first mobile chip development for 10nm FinFET technology. But he did not mention specifics 10nm FinFET process, the process is expected to be released at the end of 2016 to 2017 during the advent of progress with Intel’s 10nm 3D transistor technology almost.
In addition, after the 10nm technology node there will be enter 7nm and 5nm, the transistor becomes thinner, Kim Ki-nam, said after 7nm people should use a new generation of transistor structures, such as GAA FinFET (gate-all-around, all-ring gate) technology, such transistors have gate 2-4 equivalents, which may not only based on a silicon material, but also used indium gallium arsenide InGaAs material.