For now the main drawback of SSD is their capacity, although the biggest players in the semiconductor market are already working on a solution to this problem. Companies Intel and Micron are planning to implement NAND (3D V-NAND) – according to the assumptions, this will help in the construction of cheaper SSDs, whose capacity is expected to exceed 10 TB.
Intel plans to manufacture SSDs with a hefty capacity of over 10 TB
Rob Crooke, vice president of Non-Volatile Memory Solutions Group at Intel, during a meeting with investors, has announced the development of 3D NAND. Currently, it allows the construction of MLC NAND consisting of 32 layers of a 256 Gb (multi-level cell, 2-bit-per cell), which translates to 1 TB in one Solid-State, and more than 10 TB throughout the SSD. For TLC NAND memory can hold one layer with 384 GB triple-level cell, 3-bit-per cell) capacity.
3D V-NAND flash memory chips will feature 32-layer vertically stacked cell arrays that are “interconnected” using four billion through silicon vias (TSVs). At the start of mass production of such solid-state we will have to wait until 2016.
During the meeting Intel has also presented some interesting forecasts – they suggest that, over time, the difference in performance HDD and SSD will increasingly grow, and roughly 2018 years semiconductor media will cover 50% of the market.
Of course, not only Intel and Micron NAND working in solid-state capacity. Some time ago, Samsung, SanDisk and Toshiba formed a consortium that has to work on improving the 3D V-NAND. In this case, the solution is already being used in production on a massive scale and the first SSD to use it was Samsung SSD 850 PRO.