Companies Intel and Micron announced the availability of 3D NAND technology, which will build even roomier media, thus providing a continuous increase in productivity and cost savings.

Flash memory storage is a technology used in the thinnest laptops, the fastest data centers and almost in any mobile phone, tablet and mobile device. New 3D NAND technology, developed jointly by Intel and Micron, with extreme precision placed vertically layer of cells that store data, and to eventually get a storage device for three times more capacity than competitive technologies. This allows for more data in a smaller space, which means a significant reduction in cost, lower power consumption and higher performance in a number for mobile consumers, as well as in the most demanding enterprise applications (enterprise class SSDs).

Intel and Micron present 32-layer 3D NAND Die Size: SSDs with Size of 10Tb are on the Way


One of the most important advantages of this technology lies in the same basic memory cell. Intel and Micron decided to use a cell with a floating gate – commonly used solution improved over the years of mass production of hybrid flash memory. This is the first use of a cell with a floating gate NAND 3D, which was a key design decision, permitting greater efficiency, as well as improve the quality and reliability.


I estimated Intel-Micron’s 32-layer 3D NAND to have array efficiency of approximately 85%, which is very good and considerably higher than Samsung’s 32-layer design (66% for the 86Gbit MLC part and 72% for the 128Gbit TLC part). Samsung did some peripheral circuitry optimizations for the 32-layer TLC part that explain the higher array efficiency versus the MLC part.

New technology is placed vertically 3D NAND flash memory cells into 32 layers, whereby a plate of multi-cell (MLC) with a capacity of 256Gb and TLC cell with a capacity of 384 GB, which is housed in a standard enclosure. This capacity will enable the creation of SSD with a size leaf chewing gum, offering more than 3.5 TB capacity and standard 2.5-inch SSD with a capacity of over 10 TB. Capacity is reached the vertical arrangement of cells, because the size of each cell can be significantly higher. This in turn should increase both efficiency and durability, making even the TLC structures, suitable for storage in the data center.


“Micron and Intel’s collaboration have resulted in industry-leading semiconductor memory technology that offers high density, efficiency and effectiveness, and also has no equal among flash solutions” – said Brian Shirley, vice president, Memory Technology and Solutions at Micron Technology. “Technology 3D NAND has the potential to make fundamental changes in the market. The scale of the impact that flash memory was until now – from smartphones to supercomputers optimized for flash memory – this is just the tip of what can be achieved. “

Test systems 3D NAND MLC 256Gb version is now sent to selected partners, while the 384 GB version of TLC will be sent out for testing in late spring. The production line is already running, and both devices will be produced at full capacity before the fourth quarter of this year. Both companies are also developing SSD product lines based on the 3D NAND technology and it is expected that these devices will be added within the next year.

Source: anandtech, Micron, Intel

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