GlobalFoundries today announced to offer a new technology in the form of 7nm FinFET. This new process node offers more processing power for data centers, networks, powerful SoC, high-end processors and deep intelligence applications.
GlobalFoundries will jump directly from 14nm to 7nm
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According to GlobalFoundries, new 7nm FinFET lithography is capable of delivering more than twice logic density and increases performance by 30 percent in comparison with current processors based on both 16 and 14nm FinFET lithograph. To achieve this lithography, the company will use new tools and processes with an additional investment of several billion dollars in its Fab 8 to allow the development and mass production of new process node.
“GlobalFoundries made a bold decision to jump directly from the 14nm to 7nm, a decision which is now supported by several leading companies in semiconductors due to improved performance and power, to which is added the only marginal benefits for the high presenting cost manufacturing process to 10nm, ” said Jim McGregor, founder and principal analyst of Tyrian Research.
“As the manufacturing process 28nm, 16nm and 14nm, the 7nm seem to be the next major manufacturing process that is widely used by the entire semiconductor industry for at least the next decade.”
It is expected that the technology will be ready to design customized products of its customers (where Advanced Micro Devices (AMD) and Qualcomm are the most important) in the second half of 2017.